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TOSHIBA SSM6L820R,LXHF product image
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TOSHIBA SSM6L820R,LXHFRoHS

Manufacturer
TOSHIBA
MPN
SSM6L820R,LXHF
LCSC Part #
C17286120
Packaging
TSOP-6-F
Customer #
Key Attributes
4A 1.8W 157mΩ@1.8V 1.2V 1 N-Channel + 1 P-Channel TSOP-6-F FET, MOSFET Arrays RoHS
Datasheetpdf iconTOSHIBA SSM6L820R,LXHF

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTOSHIBA
PackagingTSOP-6-F
Current - Continuous Drain(Id)4A
Pd - Power Dissipation1.8W
RDS(on)157mΩ@1.8V
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)76pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)480pF
Gate Charge(Qg)6.7nC@4.5V
Operating Temperature-
Output Capacitance(Coss)90pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • AEC-Q101 qualified
  • Low drain-to-source on-resistance
  • Q1 N-channel: RDS(ON) = 39.1 mΩ (max) (@ VGS = 4.5 V)
  • Q1 N-channel: RDS(ON) = 53 mΩ (max) (@ VGS = 2.5 V)
  • Q1 N-channel: RDS(ON) = 82 mΩ (max) (@ VGS = 1.8 V)
  • Q2 P-channel: RDS(ON) = 45 mΩ (max) (@ VGS = -10 V)
  • Q2 P-channel: RDS(ON) = 56 mΩ (max) (@ VGS = -4.5 V)
  • Q2 P-channel: RDS(ON) = 76 mΩ (max) (@ VGS = -2.5 V)
  • Q2 P-channel: RDS(ON) = 157 mΩ (max) (@ VGS = -1.8 V)

Applications

AI Translation
  • Power management switch
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.6279$ 0.63
200+$ 0.2509$ 50.18
500+$ 0.2432$ 121.60
1,000+$ 0.2386$ 238.60
Standard Packaging3000/Full Reel
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