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VISHAY SQJB00EP-T1_BE3 product image
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VISHAY SQJB00EP-T1_BE3RoHS

Manufacturer
VISHAY
MPN
SQJB00EP-T1_BE3
LCSC Part #
C17274873
Packaging
PowerPAKSO-8
Customer #
Key Attributes
30A 13mΩ@10V 48W 3.5V 2 N-Channel PowerPAKSO-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQJB00EP-T1_BE3

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingPowerPAKSO-8
Current - Continuous Drain(Id)30A
RDS(on)13mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)35nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)550pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

A 300 W LDMOS RF power transistor for broadcast applications in the HF to 500 MHz frequency range, as well as industrial, scientific, and medical applications.

Features

AI Translation
  • TrenchFET Power MOSFET
  • AEC-Q101 Qualified
  • 100% Tested for Rg and UIS
  • RoHS Compliant
  • Halogen-Free
  • N-Channel MOSFET

Applications

AI Translation
  • Industrial, scientific, and medical applications
  • Broadcast transmitter applications
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.4905$ 1.49
200+$ 0.5953$ 119.06
500+$ 0.5746$ 287.30
1,000+$ 0.5651$ 565.10
Standard Packaging3000/Full Reel
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