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TOSHIBA RN1703JE(TE85L,F) product image
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TOSHIBA RN1703JE(TE85L,F)RoHS

Manufacturer
TOSHIBA
MPN
RN1703JE(TE85L,F)
LCSC Part #
C17268089
Packaging
SOT-553
Customer #
Key Attributes
TRANS PREBIAS NPN 50V SOT-553
Datasheetpdf iconTOSHIBA RN1703JE(TE85L,F)
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.152$ 0.76
50+$ 0.1481$ 7.41
150+$ 0.1456$ 21.84
500+$ 0.143$ 71.50
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
ManufacturerTOSHIBA
PackagingSOT-553
Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO10V
DC Current Gain70
Vce Saturation(VCE(sat))300mV
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation100mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,200mV
Voltage - Input(Max)(VI(off))1.5V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN
Number2 NPN Pre-Biased (Emitter-Coupled)
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Features

AI Translation
  • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package.
  • Incorporating a bias resistor into a transistor reduces parts count.
  • Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
  • A wide range of resistor values is available for use in various circuit designs.
  • Complementary to RN2701JE to RN2706JE

Applications

AI Translation
  • Switching
  • Inverter Circuit
  • Interface Circuit
  • Driver Circuit