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Infineon IRF7413PBF product image
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Infineon IRF7413PBFRoHS

Manufacturer
MPN
IRF7413PBF
LCSC Part #
C17226389
Packaging
SO-8
Customer #
Key Attributes
30V 13A 3V 2.5W 18mΩ@4.5V 1 N-channel N-Channel SO-8 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRF7413PBF
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.8165$ 0.82
200+$ 0.3272$ 65.44
500+$ 0.3151$ 157.55
1,000+$ 0.3106$ 310.60
Standard Packaging3800/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Configuration-
Drain to Source Voltage30V
Output Capacitance(Coss)680pF
Current - Continuous Drain(Id)13A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)18mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)79nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3800
Sales UnitPiece

Introduction

AI Translation

The fifth-generation HEXFET utilizes advanced processing technology to achieve extremely low on-resistance per unit silicon area. This advantage, combined with the fast switching speed and robust device design for which HEXFET power MOSFETs are renowned, provides designers with an exceptionally efficient and reliable device suitable for a wide range of applications. The SO-8 package has been enhanced with a custom lead frame to improve thermal characteristics and multi-chip capability, making it ideal for various power applications. These improvements enable significant PCB space savings when multiple devices are used in an application. The package is compatible with vapor phase, infrared, or wave soldering techniques. In typical PCB-mounted applications, power dissipation can exceed 0.8W.

Features

AI Translation
  • Ultra-low on-resistance
  • Surface mount
  • Dynamic dv/dt rated
  • Fast switching
  • 100% RG tested
  • Lead-free

Applications

AI Translation
  • Switch