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Taiwan Semiconductor TSM200N03DPQ33 RGG product image
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Taiwan Semiconductor TSM200N03DPQ33 RGGRoHS

Manufacturer
MPN
TSM200N03DPQ33 RGG
LCSC Part #
C17217550
Packaging
PDFN-8(3x3)
Customer #
Key Attributes
20A 30mΩ@4.5V 20W 2.5V 2 N-Channel PDFN-8(3x3) FET, MOSFET Arrays RoHS
Datasheetpdf iconTaiwan Semiconductor TSM200N03DPQ33 RGG
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2322$ 0.23
200+$ 0.0927$ 18.54
500+$ 0.0896$ 44.80
1,000+$ 0.088$ 88.00
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerTaiwan Semiconductor
PackagingPDFN-8(3x3)
Current - Continuous Drain(Id)20A
RDS(on)30mΩ@4.5V
Pd - Power Dissipation20W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)32pF
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)4.1nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)55pF

Introduction

AI Translation

Designed specifically for PCN and PCS base station applications in the 1900 to 2000 MHz frequency range. Suitable for TDMA, CDMA, and multi-carrier amplifier applications.

Features

AI Translation
  • Fast switching
  • 100% avalanche tested
  • Lead-free plating
  • RoHS compliant per EU directive 2011/65/EU and WEEE directive 2002/96/EC
  • Halogen-free per IEC 61249-2-21

Applications

AI Translation
  • Power Supply
  • Motor Control