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DIODES DMN63D1LV-13 product image
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DIODES DMN63D1LV-13

Manufacturer
MPN
DMN63D1LV-13
LCSC Part #
C17197674
Packaging
SOT-563
Customer #
Key Attributes
60V 550mA 940mW 3Ω@5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS
DatasheetDIODES DMN63D1LV-13
RoHS Compliance4 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1248$ 0.12
200+$ 0.0498$ 9.96
500+$ 0.0482$ 24.10
1,000+$ 0.0474$ 47.40
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-563
Drain to Source Voltage60V
Current - Continuous Drain(Id)550mA
Pd - Power Dissipation940mW
RDS(on)3Ω@5V
TypeN-Channel
Number2 N-Channel
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Output Capacitance(Coss)-

Introduction

AI Translation

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability

Applications

AI Translation
  • Motor Control
  • Power Management Functions Backlighting