NTE Electronics NTE451
| Manufacturer | |
| MPN | NTE451 |
| LCSC Part # | C17180410 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | 4mA 1 N-channel 350mW 25V TO-92 JFETs RoHS |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 4mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 4mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
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Features
AI Translation
- Drain-Gate Voltage V_DG: 25V
- Reverse Gate-Source Voltage VGSR: 25V
- Drain Current ID: 30mA
- Total Device Dissipation (T_C = +25°C) P_D: 350mW
- Derate above 25°C: 2.8mW/°C
- Operating Junction Temperature Range T_J: -65°C to +150°C
- Storage Temperature Range T_Stg: -65°C to +150°C
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 4.5387 | $ 4.54 |
| 200+ | $ 1.811 | $ 362.20 |
| 500+ | $ 1.7503 | $ 875.15 |
| 1,000+ | $ 1.7215 | $ 1721.50 |
Standard Packaging1/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 4mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 5pF | |
| Drain Current (Idss) | 4mA | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW |
| Type | Description | |
|---|---|---|
| Reverse Transfer Capacitance (Crss) | - | |
| Configuration | - | |
| RDS(on) | - | |
| operating temperature | -65℃~+150℃ | |
| Gate-Source Breakdown Voltage (Vgss) | 25V | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Drain-Gate Voltage V_DG: 25V
- Reverse Gate-Source Voltage VGSR: 25V
- Drain Current ID: 30mA
- Total Device Dissipation (T_C = +25°C) P_D: 350mW
- Derate above 25°C: 2.8mW/°C
- Operating Junction Temperature Range T_J: -65°C to +150°C
- Storage Temperature Range T_Stg: -65°C to +150°C
C17180410 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

