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MATSUKI ME50P06-G product image
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MATSUKI ME50P06-GRoHS

Manufacturer
MATSUKIAsian Brands
MPN
ME50P06-G
LCSC Part #
C165230
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
MOSFET P-CH 60V 61A TO-252-2(DPAK)
Datasheetpdf iconMATSUKI ME50P06-G
In-Stock: 17,977
17,977 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4787$ 0.48
10+$ 0.3716$ 3.72
30+$ 0.3262$ 9.79
100+$ 0.2694$ 26.94
500+$ 0.2321$ 116.05
1,000+$ 0.2159$ 215.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMATSUKI
PackagingTO-252-2(DPAK)
Drain to Source Voltage60V
Output Capacitance(Coss)373pF
Current - Continuous Drain(Id)61A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)336pF
RDS(on)20mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.707nF
Gate Charge(Qg)94nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The ME50P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.

Features

AI Translation
  • RDS(ON)≦17mΩ@VGS=-10V RDS(ON)≦20mΩ@VGS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability

Applications

AI Translation
  • Power Management in Note book DC/DC Converter
  • Load Switch
  • LCD Display inverter