DIODES DMN65D8L-7
| Manufacturer | |
| MPN | DMN65D8L-7 |
| LCSC Part # | C155341 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 310mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 310mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 4Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22pF | |
| Gate Charge(Qg) | 870pC@10V | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- DC-DC converters
- Power management functions
- Battery-powered systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
In-Stock: 5,670
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0862 | $ 0.43 |
| 50+ | $ 0.0678 | $ 3.39 |
| 150+ | $ 0.0586 | $ 8.79 |
| 500+ | $ 0.0517 | $ 25.85 |
| 3,000+ | $ 0.0462 | $ 138.60 |
| 6,000+ | $ 0.0434 | $ 260.40 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 310mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 540mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| RDS(on) | 4Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 22pF | |
| Gate Charge(Qg) | 870pC@10V | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- DC-DC converters
- Power management functions
- Battery-powered systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
C155341 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



