DIODES DMN3135LVT-7
| Manufacturer | |
| MPN | DMN3135LVT-7 |
| LCSC Part # | C155326 |
| Packaging | TSOT-26 |
| Customer # | |
| Key Attributes | MOSFET 30V 3.5A TSOT-26 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 3.5A | |
| RDS(on) | 100mΩ@4.5V | |
| Pd - Power Dissipation | 1.27W | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 30V | |
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 305pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, eco-friendly device
- AEC-Q101 certified, high reliability
Applications
AI Translation
- Backlight illumination
- DC-DC converter
- Power management function
In-Stock: 325
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3987 | $ 1.99 |
| 50+ | $ 0.3185 | $ 15.93 |
| 150+ | $ 0.2841 | $ 42.62 |
| 500+ | $ 0.2413 | $ 120.65 |
| 3,000+ | $ 0.2126 | $ 637.80 |
| 6,000+ | $ 0.2011 | $ 1206.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Current - Continuous Drain(Id) | 3.5A | |
| RDS(on) | 100mΩ@4.5V | |
| Pd - Power Dissipation | 1.27W | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Drain to Source Voltage | 30V | |
| Type | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 305pF | |
| Gate Charge(Qg) | 9nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 40pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- Fully lead-free and RoHS compliant
- Halogen- and antimony-free, eco-friendly device
- AEC-Q101 certified, high reliability
Applications
AI Translation
- Backlight illumination
- DC-DC converter
- Power management function
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



