TI LM5109BMA/NOPB

The LM5109B device is a cost-effective high-voltage gate driver designed to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. The floating high-side driver can operate with supply rail voltages up to 90V. The outputs are independently controlled via cost-effective TTL- and CMOS-compatible input thresholds. A robust level-shifting technique combines high operating speed and low power consumption and provides clean level shifting from the control input logic to the high-side gate driver. The device provides undervoltage lockout on both the low-side and high-side supply rails. The device is available in an 8-pin SOIC and a thermally enhanced 8-pin WSON package.

• Drives high-side and low-side N-channel MOSFETs
• 1A peak output current (1.0A sink and 1.0A source)
• TTL and CMOS compatible inputs
• Bootstrap supply voltage up to 108VDC
• Short propagation time (30ns typical)
• Drives 1000pF loads with 15ns rise and fall times
• Excellent propagation delay matching (2ns typical)
• Supply rail UVLO support
• Low power consumption
• 8-pin SOIC and thermally enhanced 8-pin WSON packages

• Current feedback push-pull converters
• Half-bridge and full-bridge power converters
• Solid-state motor drives
• Double-switch forward power converters