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DIODES DMP2002UPS-13
| Manufacturer | |
| MPN | DMP2002UPS-13 |
| LCSC Part # | C154869 |
| Packaging | PowerDI5060-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 60A PowerDI5060-8 |
| Datasheet | DIODES DMP2002UPS-13 |
| RoHS Compliance | 5 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Output Capacitance(Coss) | 2.547nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.924nF | |
| RDS(on) | 3.8mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.826nF | |
| Gate Charge(Qg) | 585nC@10V | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Output Capacitance(Coss) | 2.547nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 60A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.924nF | |
| RDS(on) | 3.8mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.826nF | |
| Gate Charge(Qg) | 585nC@10V | |
| Vgs | ±12V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Features
AI Translation
- Thermally Efficient Package - Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On State Losses
- <1.1mm Package Profile – Ideal for Thin Applications
- Lead - Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC - Q101 Standards for High Reliability
Applications
AI Translation
- Switch
In-Stock: 102
102 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.4373 | $ 1.44 |
| 10+ | $ 1.2406 | $ 12.41 |
| 30+ | $ 1.1423 | $ 34.27 |
| 100+ | $ 1.0456 | $ 104.56 |
| 500+ | $ 0.9866 | $ 493.30 |
| 1,000+ | $ 0.9571 | $ 957.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Output Capacitance(Coss) | 2.547nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 60A | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.924nF | |
| RDS(on) | 3.8mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.826nF | |
| Gate Charge(Qg) | 585nC@10V | |
| Vgs | ±12V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | PowerDI5060-8 | |
| Output Capacitance(Coss) | 2.547nF | |
| Pd - Power Dissipation | 2.3W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 60A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.924nF | |
| RDS(on) | 3.8mΩ@2.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 12.826nF | |
| Gate Charge(Qg) | 585nC@10V | |
| Vgs | ±12V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
Features
AI Translation
- Thermally Efficient Package - Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On State Losses
- <1.1mm Package Profile – Ideal for Thin Applications
- Lead - Free Finish; RoHS Compliant
- Halogen and Antimony Free. “Green” Device
- Qualified to AEC - Q101 Standards for High Reliability
Applications
AI Translation
- Switch
C154869 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| HSBA1119 | HUASHUO | PRPAK5x6-8L | 1,539 | $ 0.5352 | ||
| SI7157DP-T1-GE3 | VISHAY | PowerPAK-SO-8 | 2,933 | $ 1.9994 | ||
| LWP3007AD5 | Lewa Micro | PDFN-8L(5x6) | 5,000 | $ 0.4209 | ||
| NC006PG-B | DOINGTER | DFN-8(5x6) | 130 | $ 0.2363 | ||
| HSBA3119 | HUASHUO | PRPAK5x6-8L | 1,885 | $ 0.8232 | ||
| SIRA01DP-T1-GE3-HXY | HXY MOSFET | DFN-8L(5x6) | 419 | $0.7599 $0.7998 | ||
| IRFH9310TRPBF-HXY | HXY MOSFET | DFN-8(5x6) | 102 | $ 0.6582 | ||
| DMP22M2UPS-13 | DIODES | PowerDI5060-8 | 0 | $ 1.5162 | ||
| AON6411 | AOS | DFN-8(5x6) | 0 | $ 1.0358 | ||
| NCEP30PT16G | NCE | DFN-8L(5x6) | 0 | $ 0.9277 |