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onsemi FDG6332CRoHS

Manufacturer
MPN
FDG6332C
LCSC Part #
C154512
Packaging
SC-70-6(SOT-363)
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 0.7A SC-70-6(SOT-363)
Datasheetpdf icononsemi FDG6332C
In-Stock: 35
35 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.4039$ 0.40
10+$ 0.3144$ 3.14
30+$ 0.2753$ 8.26
100+$ 0.2264$ 22.64
500+$ 0.2052$ 102.60
1,000+$ 0.1922$ 192.20
Standard Packaging3000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSC-70-6(SOT-363)
Drain to Source Voltage20V
Output Capacitance(Coss)34pF
Current - Continuous Drain(Id)700mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)630mΩ@2.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)114pF
Gate Charge(Qg)2nC@4.5V
TypeN-Channel + P-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The N & P-Channel MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Features

AI Translation
  • Q1 0.7 A, 20V. RDS(ON)=300 mΩ @ VGS=4.5 V; RDS(ON)=400 mΩ @ VGS=2.5 V
  • Q2 –0.6 A, –20V. RDS(ON)=420 mΩ @ VGS=-4.5 V; RDS(ON)=630 mΩ @ VGS=-2.5 V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)

Applications

AI Translation
  • DC/DC converter
  • Load switch
  • LCD display inverter