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onsemi FDN306PRoHS

Manufacturer
onsemi
MPN
FDN306P
LCSC Part #
C154510
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 12V 2.6A SOT-23
Datasheetpdf icononsemi FDN306P
In-Stock: 1,980
1,980 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.3726$ 1.86
50+$ 0.2994$ 14.97
150+$ 0.268$ 40.20
500+$ 0.2289$ 114.45
3,000+$ 0.1993$ 597.90
6,000+$ 0.1889$ 1133.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Drain to Source Voltage12V
Output Capacitance(Coss)454pF
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)302pF
RDS(on)80mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)1.138nF
Gate Charge(Qg)12nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-Channel 1.8V specified MOSFET uses advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

AI Translation
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT - 3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

AI Translation
  • Battery management
  • Load switch
  • Battery protection