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Infineon IRF8788TRPBF product image
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Infineon IRF8788TRPBFRoHS

Manufacturer
Infineon
MPN
IRF8788TRPBF
LCSC Part #
C153239
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 24A SO-8
Datasheetpdf iconInfineon IRF8788TRPBF
In-Stock: 490
490 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.9001$ 0.90
10+$ 0.7458$ 7.46
30+$ 0.6694$ 20.08
100+$ 0.593$ 59.30
500+$ 0.5459$ 272.95
1,000+$ 0.5232$ 523.20
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSO-8
Drain to Source Voltage30V
Output Capacitance(Coss)980pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.35V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.72nF
Gate Charge(Qg)66nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications.

Features

AI Translation
  • Very Low Gate Charge
  • Very Low RDS(on) at 4.5V VGS
  • Ultra-Low Gate Impedance
  • Fully Characterized Avalanche Voltage and Current
  • 20V VGS Max. Gate Rating
  • 100% tested for Rg
  • Lead-Free

Applications

AI Translation
  • Synchronous MOSFET for Notebook Processor Power
  • Synchronous Rectifier MOSFET for Isolated DC-DC Converters
  • HEXFET Power MOSFET