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Infineon IPB65R310CFD
| Manufacturer | |
| MPN | IPB65R310CFD |
| LCSC Part # | C152418 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 11.4A TO-263 |
| Datasheet | Infineon IPB65R310CFD |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 104.2W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 11.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| RDS(on) | 310mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 104.2W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 11.4A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| RDS(on) | 310mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMos Tm is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOsTM CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
Features
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
Applications
- 650V CoolMOS TM CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2949 | $ 1.29 |
| 10+ | $ 1.1817 | $ 11.82 |
| 30+ | $ 1.1115 | $ 33.35 |
| 100+ | $ 1.0381 | $ 103.81 |
| 500+ | $ 1.0063 | $ 503.15 |
| 1,000+ | $ 0.9919 | $ 991.90 |
Standard Packaging1000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 104.2W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 11.4A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| RDS(on) | 310mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Output Capacitance(Coss) | 55pF | |
| Pd - Power Dissipation | 104.2W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 11.4A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| RDS(on) | 310mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.1nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
CoolMos Tm is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOsTM CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler
Features
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
Applications
- 650V CoolMOS TM CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom
C152418 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| NCE65T360D | NCE | Similar | TO-263 | 286 | $ 1.3274 | ||
| FCB199N65S3 | onsemi | Similar | D2PAK | 10 | $ 7.613 | ||
| NCE70T360D | NCE | Similar | TO-263 | 744 | $ 1.2084 | ||
| SIHB17N80AE-GE3 | VISHAY | Similar | D2PAK(TO-263) | 10 | $ 2.9455 | ||
| ASB65R300E | ANHI | Similar | TO-263 | 364 | $ 0.7197 |