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TOSHIBA HN1A01FE-Y,LF product image
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TOSHIBA HN1A01FE-Y,LF

Manufacturer
MPN
HN1A01FE-Y,LF
LCSC Part #
C150162
Packaging
SOT-666-6
Customer #
Key Attributes
TRANS PNP 50V 150mA SOT-666-6
DatasheetTOSHIBA HN1A01FE-Y,LF
Alternative Parts2
Every Order Guarantee
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Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.0835$ 0.42
50+$ 0.066$ 3.30
150+$ 0.0573$ 8.60
500+$ 0.0508$ 25.40
2,500+$ 0.0427$ 106.75
4,000+$ 0.0401$ 160.40
Standard Packaging4000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
ManufacturerTOSHIBA
PackagingSOT-666-6
Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation100mW
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)80MHz
Vce Saturation(VCE(sat))300mV
typePNP
Number2 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Introduction

AI Translation

Audio Frequency General Purpose Amplifier Applications

Features

AI Translation
  • Small package (Dual type)
  • High voltage and high current: VCEO = -50V, lC = -150mA (max)
  • High hFE: hFE = 120 to 400
  • Excellent hFE linearity: hFE(IC = -0.1mA)/hFE(IC = -2mA) = 0.95 (typ.)

Alternative Parts

MPNManufacturerAlternative TypePackagingAvailabilityUnit Price
EMT1T2RROHMSimilarSOT-563(SOT-666)2,340$ 0.0798
EMT1FHAT2RROHMSimilarSOT-563(SOT-666)0$ 0.1136
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