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Infineon 1EDI20N12AFXUMA1
| Manufacturer | |
| MPN | 1EDI20N12AFXUMA1 |
| LCSC Part # | C148286 |
| Packaging | SOIC-8 |
| Customer # | |
| Key Attributes | Single Channel MOSFET and GaN HEMT Gate Driver IC |
| Datasheet |  Infineon 1EDI20N12AFXUMA1 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Isolators - Gate Drivers | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Driven Configuration | - | |
| Features | Under Voltage Protection;Enable shutdown;Short Circuit Protection | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Output High(IOH) | 4A | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~35V | |
| Rise Time | 5ns | |
| Fall Time | 4ns | |
| Number of Channels | 1 | |
| Current - Output Low(IOL) | 3.5A | |
| Quiescent Current | 650uA | |
| Propagation Delay(tpd) | 115ns;120ns | |
| Load Type | MOSFET | |
| Input Logic Level - Low | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Single channel isolated Gate Driver
- Input to output isolation voltage up to 1200 V
- For high voltage power FETs
- 4 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs
- Galvanically isolated
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Isolators - Gate Drivers | |
| Manufacturer | Infineon | |
| Packaging | SOIC-8 | |
| Driven Configuration | - | |
| Features | Under Voltage Protection;Enable shutdown;Short Circuit Protection | |
| Operating Temperature | -40℃~+150℃ | |
| Current - Output High(IOH) | 4A | |
| Input Logic Level - High | - | |
| Voltage - Supply | 10V~35V | |
| Rise Time | 5ns | |
| Fall Time | 4ns | |
| Number of Channels | 1 | |
| Current - Output Low(IOL) | 3.5A | |
| Quiescent Current | 650uA | |
| Propagation Delay(tpd) | 115ns;120ns | |
| Load Type | MOSFET | |
| Input Logic Level - Low | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Single channel isolated Gate Driver
- Input to output isolation voltage up to 1200 V
- For high voltage power FETs
- 4 A typical peak current at rail-to-rail outputs
- Separate source and sink outputs
- Galvanically isolated
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |