VISHAY SI6913DQ-T1-GE3
| Manufacturer | |
| MPN | SI6913DQ-T1-GE3 |
| LCSC Part # | C143729 |
| Packaging | TSSOP-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 12V 5.8A TSSOP-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSSOP-8 | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 1.14W | |
| RDS(on) | 37mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Drain to Source Voltage | 12V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18.5nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSSOP-8 | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 1.14W | |
| RDS(on) | 37mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Drain to Source Voltage | 12V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18.5nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Power MOSFETs
Applications
AI Translation
- Load Switch
- Battery Switch
In-Stock: 7
7 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.3669 | $ 1.37 |
| 10+ | $ 1.1285 | $ 11.29 |
| 30+ | $ 0.9807 | $ 29.42 |
| 100+ | $ 0.8283 | $ 82.83 |
| 500+ | $ 0.7589 | $ 379.45 |
| 1,000+ | $ 0.7287 | $ 728.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSSOP-8 | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 1.14W | |
| RDS(on) | 37mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Drain to Source Voltage | 12V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18.5nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | TSSOP-8 | |
| Current - Continuous Drain(Id) | 5.8A | |
| Pd - Power Dissipation | 1.14W | |
| RDS(on) | 37mΩ@1.8V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Drain to Source Voltage | 12V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 18.5nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Power MOSFETs
Applications
AI Translation
- Load Switch
- Battery Switch
C143729 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



