VISHAY SI4465ADY-T1-GE3
| Manufacturer | |
| MPN | SI4465ADY-T1-GE3 |
| LCSC Part # | C143069 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 8V 13.7A SO-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 6.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
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Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- 1.8 V Rated
- 100 % Rg Tested
In-Stock: 6
6 In stock, ships now
Discontinued
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2662 | $ 2.27 |
| 10+ | $ 2.2198 | $ 22.20 |
| 30+ | $ 2.1889 | $ 65.67 |
| 100+ | $ 2.158 | $ 215.80 |
Standard Packaging2500/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 6.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 8V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 13.7A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 6.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 16mΩ@1.8V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 55nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- 1.8 V Rated
- 100 % Rg Tested
C143069 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



