TI UCC27211DDAR

Drives Two N-Channel MOSFETs in High-Side and Low-Side Configuration With Independent Inputs Maximum Boot Voltage 120-V DC 4-A Sink, 4-A Source Output Currents 0.9–Ω Pullup and Pulldown Resistance Input Pins Can Tolerate -10 V to 20 V and Are Independent of Supply Voltage Range TTL or Pseudo-CMOS Compatible Input Versions 8-V to 17-V VDD Operating Range, (20-V Absolute Maximum) 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF Load Fast Propagation Delay Times (18 ns Typical) 2-ns Delay Matching Symmetrical Undervoltage Lockout for High-Side and Low-Side Driver All Industry Standard Packages Available (SOIC8, PowerPAD SOIC-8, 4-mm x 4-mm SON-8 and 4-mmx4-mm SON-10) Specified from -40 to 140 ℃

The UCC27210 and UCC27211 drivers offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have been reduced to 0.9 Ω, allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure can directly handle –10 VDC, increasing robustness and allowing direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20-V.

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