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VISHAY SQD40P10-40L_GE3 product image
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VISHAY SQD40P10-40L_GE3

Manufacturer
MPN
SQD40P10-40L_GE3
LCSC Part #
C141570
Packaging
TO-252
Customer #
Key Attributes
MOSFET P-CH 100V 38A TO-252
DatasheetVISHAY SQD40P10-40L_GE3
RoHS Compliance2 documents available
Alternative Parts11
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 1,239
1,239 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1711$ 1.17
10+$ 1.054$ 10.54
30+$ 0.9906$ 29.72
100+$ 0.9174$ 91.74
500+$ 0.8865$ 443.25
1,000+$ 0.8719$ 871.90
Standard Packaging2000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingTO-252
Output Capacitance(Coss)301pF
Pd - Power Dissipation136W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)38A
Gate Threshold Voltage (Vgs(th))2.5V
Reverse Transfer Capacitance (Crss@Vds)208pF
RDS(on)48mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.433nF
Gate Charge(Qg)96nC@10V
Vgs±20V
TypeP-Channel

Features

AI Translation
  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET
  • Package with Low Thermal Resistance
  • AEC-Q101 Qualified
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
VBE2104NVBsemi ElecTO-252343$1.4857 $1.5638
SUD50P10-43L-E3-VBVBsemi ElecTO-25225$1.2727 $1.3396
SM1A33PSU-VBVBsemi ElecTO-25220$1.1472 $1.3496
SQD40P10-40L-GE3-VBVBsemi ElecTO-2527$1.1472 $1.3496
VBZE40P10VBsemi ElecTO-25226$1.6960 $1.7852
HSU0139HUASHUOTO-2529,234$ 0.5903
TPM30P10K3TECH PUBLICTO-252-3L2,102$ 0.3394
SP010P36GTHSiliupTO-2521,340$ 0.3016
SP010P35GTHSiliupTO-252785$ 0.359
DOD40P10DOINGTERTO-252230$ 0.3317
P6010DD-VBVBsemi ElecTO-2520$ 1.9313