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TI CSD17483F4RoHS

Manufacturer
TI
MPN
CSD17483F4
LCSC Part #
C139403
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET N-CH 30V 1.5A PicoStar-3
Datasheetpdf iconTI CSD17483F4
In-Stock: 5,845
5,845 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2034$ 1.02
50+$ 0.1626$ 8.13
150+$ 0.1451$ 21.77
500+$ 0.1232$ 61.60
3,000+$ 0.1112$ 333.60
6,000+$ 0.1054$ 632.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Drain to Source Voltage30V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)1.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)370mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)190pF
Gate Charge(Qg)1.3nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 200 mΩ, 30 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize footprint in a wide range of handheld and mobile applications. It serves as a drop-in replacement for standard small-signal MOSFETs while reducing the footprint by at least 60%.

Features

AI Translation
  • Low on-resistance
  • Low gate charge (Qg) and gate-to-drain charge (Qgd)
  • Low threshold voltage
  • Ultra-small footprint (0402 package size) — 1.0mm × 0.6mm
  • Ultra-thin profile
  • Height: 0.36mm
  • Integrated ESD protection diode
  • HBM rating >4kV
  • CDM rating >2kV
  • Lead-free and halogen-free
  • RoHS compliant

Applications

AI Translation
  • Optimized for load switch applications- Optimized for general-purpose switch applications- Single-cell battery applications- Handheld and mobile applications