Alliance Memory AS7C34098A-12JIN

The AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C34098A) supply. The device is available in the JEDEC standard 400-mil, 44-pin SOJ, TSOP 2.

• Pin compatible with AS7C34098
• Industrial and commercial temperature
• Organization: 262,144 words × 16 bits
• Center power and ground pins
• High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time
• Low power consumption: ACTIVE - 650 mW /max @ 10 ns
• Low power consumption: STANDBY - 28.8 mW /max CMOS
• Individual byte read/write controls
• Easy memory expansion with CE, OE inputs
• TTL- and CMOS-compatible, three-state I/O
• JEDEC standard packages - 44-pin SOJ -400-mil - 44-pin TSOP 2
• 48-pin Mini BGA
• ESD protection ≥2000 volts
• Latch-up current ≥200 mA