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TI TLE2084ACDW

Fabricante
Cód. da peça
TLE2084ACDW
Nº LCSC
C1346996
Emb.
SOIC-16-300mil
Número do Cliente
Atrib. princ.
45mA 4 340uV 35V/us 82dB 5nA 1.6mA 9.4MHz SOIC-16-300mil Instrumentation, Op Amps, Buffer Amps RoHS
Folha de DadosTI TLE2084ACDW
Conformidade RoHS1 documentos disponíveis
Em estoque: 10
10 Em estoque, envio imediato
Mínimo: 1Múltiplo: 1Unidade de venda: Piece
Adicionar à Lista BOM
Qtd.Preço unit.Valor total
1+$ 5.6392$ 5.64
10+$ 5.5081$ 55.08
30+$ 5.4212$ 162.64
100+$ 5.3327$ 533.27
Encapsulamento Padrão40/Full Tube
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Especificações do Produto

Tudo
TipoDescrição
CategoriaIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
FabricanteTI
Emb.SOIC-16-300mil
Output Current45mA
Number of Channels4
Vos - Input Offset Voltage340uV
Slew Rate35V/us
Input Offset Current(Ios)15pA
Operating Temperature0℃~+70℃
Common Mode Rejection Ratio(CMRR)82dB
Ib - Input Bias Current5nA
Input Offset Voltage Drift(Vos TC)3.2uV/℃
Quiescent Current1.6mA
Gain Bandwidth Product9.4MHz
FeaturesShort-Circuit Protection
Input Voltage Noise Density11.6nV/√Hz@10kHz
Dual Supply-19V~-2.25V;2.25V~19V
Rail to Rail-

Descrição

Tradução por IA

The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs. BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.