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TI LMC662AIN/NOPBRoHS

Manufacturer
TI
MPN
LMC662AIN/NOPB
LCSC Part #
C1346059
Packaging
PDIP-8
Customer #
Key Attributes
2 3mV 1.1V/us 83dB 0.002pA 750uA 1.4MHz Rail-to-rail output PDIP-8 Instrumentation, Op Amps, Buffer Amps RoHS
Datasheetpdf iconTI LMC662AIN/NOPB
In-Stock: 40
40 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 5.2752$ 5.28
10+$ 4.703$ 47.03
40+$ 4.3389$ 173.56
80+$ 3.9845$ 318.76
Standard Packaging40/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerTI
PackagingPDIP-8
Number of Channels2
Vos - Input Offset Voltage3mV
Slew Rate1.1V/us
Input Offset Current(Ios)4pA
Input offset current drift(Ios TC)-
Features-
Operating Temperature-40℃~+85℃
Common Mode Rejection Ratio(CMRR)83dB
Ib - Input Bias Current0.002pA
Output Current22mA
Maximum Power Supply Range (Vdd-Vss)15.5V
Input Offset Voltage Drift(Vos TC)1.3uV/℃
Quiescent Current750uA
Gain Bandwidth Product1.4MHz
Input Voltage Noise Density22nV/√Hz@1kHz
Dual Supply-
Rail to RailRail-to-rail output
Single Supply4.75V~15.5V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging40
Sales UnitPiece

Introduction

AI Translation

Rail-to-Rail Output Swing Specified for 2 kΩ and 600Ω Loads High Voltage Gain: 126 dB Low Input Offset Voltage: ±3 mV Low Offset Voltage Drift: 1.3 μV/°C Ultra Low Input Bias Current: 2 fA Input Common-Mode Range Includes V− Operating Range from +5V to ±15V Supply ISS = 400 μA/amplifier; Independent of V+ Low Distortion: 0.01% at 10 kHz Slew Rate: 1.1 V/μs

The LMC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 kΩ and 600Ω) are all equal to or better than widely accepted bipolar equivalents.

This chip is built with TI's advanced Double-Poly Silicon-Gate CMOS process.

Features

AI Translation
  • Rail-to-Rail Output Swing Specified for 2 kΩ and 600Ω Loads
  • High Voltage Gain: 126 dB
  • Low Input Offset Voltage: ±3 mV
  • Low Offset Voltage Drift: 1.3 μV/°C
  • Ultra Low Input Bias Current: 2 fA
  • Input Common-Mode Range Includes V−
  • Operating Range from +5V to ±15V
  • Supply ISS = 400 μA/amplifier; Independent of V+
  • Low Distortion: 0.01% at 10 kHz
  • Slew Rate: 1.1 V/μs

Applications

AI Translation
  • High-Impedance Buffer or Preamplifier
  • Precision Current-to-Voltage Converter
  • Long-Term Integrator
  • Sample-and-Hold Circuit
  • Peak Detector
  • Medical Instrumentation
  • Industrial Controls
  • Automotive Sensors