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TI CSD23381F4RoHS

Manufacturer
TI
MPN
CSD23381F4
LCSC Part #
C129355
Packaging
PicoStar-3
Customer #
Key Attributes
MOSFET P-CH 12V 2.3A PicoStar-3
Datasheetpdf iconTI CSD23381F4
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QtyUnit Price(Reference Only)Total Amount
5+$ 0.0502$ 0.25
50+$ 0.0491$ 2.46
150+$ 0.0484$ 7.26
500+$ 0.0477$ 23.85
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingPicoStar-3
Drain to Source Voltage12V
Output Capacitance(Coss)98pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)970mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)236pF
Gate Charge(Qg)1.14nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 150 mΩ, 12 V P-Channel FemtoFET MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Features

AI Translation
  • Ultra-Low On-Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size) – 1.0 mm×0.6 mm
  • Ultra-Low Profile – 0.35 mm Max Height
  • Integrated ESD Protection Diode – Rated >4 kV HBM – Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

AI Translation
  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications