ISSI IS29GL128-70SLEB

The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

• Single power supply operation
• Full voltage range: 2.7 to 3.6 volts read and write operations
• Fast Access Time at -40℃ to +125℃: 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V
• VIO Input/Output 1.65V to 3.6V.
• All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
• Secured Silicon Region (SSR): 512-word/1024-byte sector for permanent, secure identification; 256-word Factory Locked SSR and 256-word Customer Locked SSR
• Uniform 64Kword/128KByte Sector Architecture
• Suspend and Resume commands for Program and Erase operations
• Write operation status bits indicate program and erase operation completion
• Support for CFI (Common Flash Interface)
• Volatile and non-volatile methods of Advanced Sector Protection
• WP#/ACC input: Accelerates programming time (when VHH is applied) for greater throughput during system production; Protects first or last sector regardless of sector protection settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program or erase cycle completion
• Minimum 100K program/erase endurance cycles.
• Data retention: 20 years (TYP)
• Package Options: 56-pin TSOP; 64-ball 13mm x 11mm BGA; 64-ball 9mm x 9mm BGA; 56-ball 9mm x 7mm BGA (Call Factory)
• Temperature Range: Extended Grade: -40℃ to +105℃; Automotive Grade: -40℃ to +125℃