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onsemi FDS6679AZRoHS

Manufacturer
onsemi
MPN
FDS6679AZ
LCSC Part #
C116730
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH 30V 13A SO-8
Datasheetpdf icononsemi FDS6679AZ
In-Stock: 1,824
1,824 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.5728$ 0.57
10+$ 0.4435$ 4.44
30+$ 0.3877$ 11.63
100+$ 0.3191$ 31.91
500+$ 0.2872$ 143.60
1,000+$ 0.2697$ 269.70
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage30V
Output Capacitance(Coss)665pF
Current - Continuous Drain(Id)13A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)745pF
RDS(on)14.8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.845nF
Gate Charge(Qg)96nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

AI Translation
  • Max rDS(on)=9.3mΩ at VGS=-10V, ID=-13A
  • Max rDS(on)=14.8mΩ at VGS=-4.5V, ID = -11A
  • Extended VGS range (-25V) for battery applications
  • HBM ESD protection level of 6kV typical
  • High performance trench technology for extremely low rDS(on)
  • High power and current handing capability

Applications

AI Translation
  • Power Management
  • load switching applications in Notebook Computers
  • load switching applications in Portable Battery Packs