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EDA-ModelleEasyEDA
NCE NCE0117K
| Hersteller | NCEAsian Brands |
| Herst.-Teilenr. | NCE0117K |
| LCSC-Nr. | C108638 |
| Verp. | TO-252-2L |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 100V 17A TO-252-2L |
| Datenblatt | NCE NCE0117K |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.35nF | |
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 85mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.35nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 85mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
NCE0117K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 100 V, ID = 17 A
- RDS(ON) < 70 mΩ @ VGS = 10 V (typical: 56 mΩ)
- RDS(ON) < 85 mΩ @ VGS = 4.5 V (typical: 65 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation performance
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Power switch applications - hard switching and high-frequency circuits
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 7,167
7,167 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.4427 | $ 0.44 |
| 10+ | $ 0.3406 | $ 3.41 |
| 30+ | $ 0.2962 | $ 8.89 |
| 100+ | $ 0.2419 | $ 24.19 |
| 500+ | $ 0.2172 | $ 108.60 |
| 1,000+ | $ 0.2024 | $ 202.40 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.35nF | |
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 85mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | NCE | |
| Verp. | TO-252-2L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 240pF | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.35nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 55W | |
| Reverse Transfer Capacitance (Crss) | 180pF | |
| RDS(on) | 85mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 30nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
NCE0117K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Merkmale
KI-Übersetzung
- VDS = 100 V, ID = 17 A
- RDS(ON) < 70 mΩ @ VGS = 10 V (typical: 56 mΩ)
- RDS(ON) < 85 mΩ @ VGS = 4.5 V (typical: 65 mΩ)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation performance
- Special process technology for high ESD capability
Anwendungen
KI-Übersetzung
- Power switch applications - hard switching and high-frequency circuits
C108638 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| NCEP25N10AK | NCE | Ähnliche | TO-252-2L | 1,490 | $ 0.5687 | ||
| NCE0224AK | NCE | Ähnliche | TO-252-2L | 3,419 | $ 0.8579 | ||
| NCE0130KA | NCE | Ähnliche | TO-252-2L | 480 | $ 0.6288 | ||
| NCEP0135AK | NCE | Ähnliche | TO-252-2L | 4,068 | $ 0.788 | ||
| NCEP18N10AK | NCE | Ähnliche | TO-252-2L | 5 | $ 0.3969 |