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onsemi FQD2P40TM

Produttore
onsemi
Cod. Prod.
FQD2P40TM
Cod. LCSC
C903731
Imballo
TO-252AA
Numero Cliente
Attr. chiave
MOSFET P-CH 400V 1.56A TO-252AA
Scheda Tecnicaonsemi FQD2P40TM
Conformità RoHS4 documenti disponibili
Parti alternative5
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100% Autentico · Reso o Sostituzione entro 30 Giorni

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Produttoreonsemi
ImballoTO-252AA
Output Capacitance(Coss)45pF
Ciss-Input Capacitance350pF
Pd - Power Dissipation2.5W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage400V
Current - Continuous Drain(Id)1.56A
Reverse Transfer Capacitance (Crss)8.5pF
RDS(on)6.5Ω@10V
Number1 P-Channel
Gate Charge(Qg)13nC@320V
Vgs±30V
Gate Threshold Voltage (Vgs(th))3V
TypeP-Channel
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Descrizione

Traduzione AI

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Caratteristiche

Traduzione AI
  • -1.56 A, -400 V, RDS(on)=6.5 Ω (Max.) VGS=-10 V, ID=-0.78 A
  • Low Gate Charge (Typ. 10 nC)
  • Low Crss (Typ. 6.5 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Applicazioni

Traduzione AI
  • switched mode power supplies
  • audio amplifier
  • DC motor control
  • variable switching power applications