15% OFF
- Pinbelegung
- Footprint
Abbildung ähnlich
EDA-ModelleEasyEDA
VBsemi Elec AOD9N50-VB
| Hersteller | VBsemi ElecAsian Brands |
| Herst.-Teilenr. | AOD9N50-VB |
| LCSC-Nr. | C7568978 |
| Verp. | TO-252 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 6A TO-252 |
| Datenblatt | VBsemi Elec AOD9N50-VB |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 360pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit (FOM) Ron×Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 20
20 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0489$ 0.8916 | $ 0.89 |
| 10+ | $ 0.853$ 0.7251 | $ 7.25 |
| 30+ | $ 0.755$ 0.6418 | $ 19.25 |
| 100+ | $ 0.657$ 0.5585 | $ 55.85 |
| 500+ | $ 0.5992$ 0.5094 | $ 254.70 |
| 1,000+ | $ 0.5687$ 0.4834 | $ 483.40 |
Standardgehäuse2500/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | VBsemi Elec | |
| Verp. | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 25pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 360pF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 83W | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Low figure-of-merit (FOM) Ron×Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Anwendungen
KI-Übersetzung
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
C7568978 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| 07N60S5 TO252-VB | VBsemi Elec | Ähnliche | TO-252 | 50 | $0.9972 $1.0496 | ||
| 7N60 TO252-VB | VBsemi Elec | Ähnliche | TO-252 | 16 | $0.8916 $1.0489 | ||
| SPD07N60S5T-VB | VBsemi Elec | Ähnliche | TO-252 | 10 | $0.9017 $1.0608 | ||
| D9N50-VB | VBsemi Elec | Ähnliche | TO-252 | 50 | $0.8813 $1.0368 | ||
| 60N745U2G-VB | VBsemi Elec | Ähnliche | TO-252 | 50 | $0.8476 $0.9971 |