MSKSEMI BSS84-MS
| Producent | MSKSEMIAsian Brands |
| Nr części prod. | BSS84-MS |
| Nr LCSC | C7379991 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 55V 0.3A SOT-23 |
| Karta Katalogowa | MSKSEMI BSS84-MS |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOT-23 | |
| Output Capacitance(Coss) | 15.1pF | |
| Ciss-Input Capacitance | 30.5pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 300mA | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 2.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOT-23 | |
| Output Capacitance(Coss) | 15.1pF | |
| Ciss-Input Capacitance | 30.5pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 300mA | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 2.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- -55 V, -0.3A, RDS(ON) = 4.0Ω@VGS = - 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- ESD protected up to 2KV
Zastosowania
Tłumaczenie AI
- Notebook Load Switch
- Battery Protection
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOT-23 | |
| Output Capacitance(Coss) | 15.1pF | |
| Ciss-Input Capacitance | 30.5pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 300mA | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 2.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | MSKSEMI | |
| Opak. | SOT-23 | |
| Output Capacitance(Coss) | 15.1pF | |
| Ciss-Input Capacitance | 30.5pF | |
| Pd - Power Dissipation | 1W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 55V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 300mA | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 2.8nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- -55 V, -0.3A, RDS(ON) = 4.0Ω@VGS = - 10V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- ESD protected up to 2KV
Zastosowania
Tłumaczenie AI
- Notebook Load Switch
- Battery Protection
C7379991 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



