Zdjęcia poglądowe
Modele EDAEasyEDA
TOSHIBA TK210V65Z,LQ
| Producent | |
| Nr części prod. | TK210V65Z,LQ |
| Nr LCSC | C7123966 |
| Opak. | DFN-4-EP(8x8) |
| Numer Klienta | |
| Klucz. cechy | 650V 15A 130W 210mΩ@10V 1 N-channel DFN-4-EP(8x8) Single FETs, MOSFETs RoHS |
| Karta Katalogowa | TOSHIBA TK210V65Z,LQ |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.37nF | |
| Pd - Power Dissipation | 130W | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.37nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typical)
- Low capacitance with high-speed switching capability
- Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)
Zastosowania
Tłumaczenie AI
- Switching Power Supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.37nF | |
| Pd - Power Dissipation | 130W | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | TOSHIBA | |
| Opak. | DFN-4-EP(8x8) | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.37nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 130W | |
| RDS(on) | 210mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typical)
- Low capacitance with high-speed switching capability
- Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)
Zastosowania
Tłumaczenie AI
- Switching Power Supply
C7123966 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |