Broadcom ASSR-601J-000E

The ASSR-601J is a high-voltage photo MOSFET designed for high-voltage industrial applications. The device consists of an AlGaAs infrared LED input stage optically coupled to a high-voltage output detection circuit. The detector incorporates a high-speed photovoltaic diode array and circuitry for driving two discrete high-voltage MOSFET switches. The relay turns on when the input LED current reaches a minimum of 7 mA, and turns off when the input voltage is 0.4V or lower. The device is equivalent to a 1 Form A electromechanical relay and is housed in a 16-pin SOIC package. This photo MOSFET provides enhanced isolation and reliability, making it ideal for applications requiring safe signal isolation.

• Compact solid-state bidirectional signal switch
• Operating temperature range: -40°C to +110°C
• Breakdown voltage, V(OFF): 1500V (at I(DSS) = 250 μA)
• Avalanche-rated MOSFET
• Output leakage current, I(O) = 10 nA (at 1000V)
• On-resistance, R(ON) < 250 Ω (at I(O) = 50 mA)
• Turn-on time: T(ON) < 4 ms
• Turn-off time: T(OFF) < 0.5 ms
• Package: 300 mil SO-16
• Creepage distance and clearance ≥ 8 mm (input-to-output)
• Creepage distance > 5 mm (between MOSFET drain pins)
• Safety and regulatory approvals: compliant with IEC/EN/DIN EN 60747-5-5; maximum working insulation voltage 1414V(PEAK); UL1577 recognized, 5000 V(RMS) for 1 minute; CSA component recognized

• Battery/motor/solar panel insulation resistance measurement/leakage detection
• BMS flying capacitor topology for battery testing
• Electromechanical relay replacement
• Inrush current limiter protection