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VBsemi Elec UTT15P06G-TN3-R-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | UTT15P06G-TN3-R-VB |
| Nr LCSC | C5878867 |
| Opak. | TO-252 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 60V 30A TO-252 |
| Karta Katalogowa | VBsemi Elec UTT15P06G-TN3-R-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% tested for single-pulse avalanche ruggedness
Zastosowania
Tłumaczenie AI
- Load Switch
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 120pF | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1nF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss) | 100pF | |
| RDS(on) | 61mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 10nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% tested for single-pulse avalanche ruggedness
Zastosowania
Tłumaczenie AI
- Load Switch
C5878867 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |