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VBsemi Elec CES2312-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | CES2312-VB |
| Nr LCSC | C558106 |
| Opak. | SOT-23(TO-236) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 20V 6A SOT-23(TO-236) |
| Karta Katalogowa | VBsemi Elec CES2312-VB |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 865pF | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 865pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free product as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- RoHS compliant with directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- DC/DC Converter - Load Switch for Portable Applications
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 865pF | |
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | SOT-23(TO-236) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 865pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 2.1W | |
| Reverse Transfer Capacitance (Crss) | 55pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8.8nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Halogen-free product as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- RoHS compliant with directive 2002/95/EC
Zastosowania
Tłumaczenie AI
- DC/DC Converter - Load Switch for Portable Applications
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |