MICROCHIP 1N6823
| Producent | |
| Nr części prod. | 1N6823 |
| Nr LCSC | C5482731 |
| Opak. | - |
| Numer Klienta | |
| Klucz. cechy | 1 Independent 100V 920mV@150A 150A Single Diodes |
| Karta Katalogowa | MICROCHIP 1N6823 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 920mV@150A | |
| Reverse Leakage Current (Ir) | 5mA@100V | |
| Non-Repetitive Peak Forward Surge Current | 750A | |
| Current - Rectified | 150A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 920mV@150A | |
| Reverse Leakage Current (Ir) | 5mA@100V | |
| Non-Repetitive Peak Forward Surge Current | 750A | |
| Current - Rectified | 150A |
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Funkcje
Tłumaczenie AI
- Tungsten/platinum Schottky barrier
- Oxide-passivated structure for ultra-low leakage current
- Guard ring for enhanced reverse energy capability
- Epitaxial construction for minimum forward voltage drop
- Hermetic, low-profile ceramic SMT power package
- Low package inductance
- Extremely low thermal resistance
- Available in standard polarity (tab to anode, 1N6823) and reverse polarity (tab to cathode, 1N6823R)
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 258.5637 | $ 258.56 |
| 200+ | $ 242.8428 | $ 48568.56 |
| 500+ | $ 234.7288 | $ 117364.40 |
| 1,000+ | $ 230.7184 | $ 230718.40 |
Standardowa Obudowa100/Full Bag | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 920mV@150A | |
| Reverse Leakage Current (Ir) | 5mA@100V | |
| Non-Repetitive Peak Forward Surge Current | 750A | |
| Current - Rectified | 150A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | MICROCHIP | |
| Opak. | - | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -65℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Voltage - Forward(Vf@If) | 920mV@150A | |
| Reverse Leakage Current (Ir) | 5mA@100V | |
| Non-Repetitive Peak Forward Surge Current | 750A | |
| Current - Rectified | 150A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Tungsten/platinum Schottky barrier
- Oxide-passivated structure for ultra-low leakage current
- Guard ring for enhanced reverse energy capability
- Epitaxial construction for minimum forward voltage drop
- Hermetic, low-profile ceramic SMT power package
- Low package inductance
- Extremely low thermal resistance
- Available in standard polarity (tab to anode, 1N6823) and reverse polarity (tab to cathode, 1N6823R)
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |

