Infineon IPD60R280P7
| Hersteller | |
| Herst.-Teilenr. | IPD60R280P7 |
| LCSC-Nr. | C536812 |
| Verp. | TO-252-3 |
| Kundennummer | |
| Hauptmerkm. | 650V 8A 53W 280mΩ@10V 1 N-channel N-Channel TO-252-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon IPD60R280P7 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 761pF | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 761pF | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Beschreibung
The CoolMOS 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, excellent robustness of the body diode under hard commutation, and superior ESD capability. In addition, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Merkmale
- Suitable for hard-switching and soft-switching (PFC and LLC) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (below 1Ohmmm²) enables superior RDS(on)/package compared to competing products
- Fully compliant with JEDEC industrial application standards
Anwendungen
- PFC stage
- Hard-switching PWM stage
- Resonant switching stage for PC desktop, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 2.1731 | $ 2.17 |
| 10+ | $ 1.9158 | $ 19.16 |
| 30+ | $ 1.7552 | $ 52.66 |
| 100+ | $ 1.5897 | $ 158.97 |
| 500+ | $ 1.5159 | $ 757.95 |
| 1,000+ | $ 1.4832 | $ 1483.20 |
Standardgehäuse2500/Full Reel | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 761pF | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-252-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 14pF | |
| Current - Continuous Drain(Id) | 8A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 761pF | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 280mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Beschreibung
The CoolMOS 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, excellent robustness of the body diode under hard commutation, and superior ESD capability. In addition, ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Merkmale
- Suitable for hard-switching and soft-switching (PFC and LLC) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (below 1Ohmmm²) enables superior RDS(on)/package compared to competing products
- Fully compliant with JEDEC industrial application standards
Anwendungen
- PFC stage
- Hard-switching PWM stage
- Resonant switching stage for PC desktop, adapters, LCD and PDP TVs, lighting, servers, telecom, and UPS
C536812 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IPD60R280P7S | Infineon | Ähnliche | TO-252-3 | 4,113 | $ 1.0942 | ||
| MS11N80HCD0 | MASPOWER | Ähnliche | TO-252 | 45 | $ 0.9957 | ||
| WMO15N70C2 | Wayon | Ähnliche | TO-252 | 1,181 | $ 0.4934 | ||
| GC11N65K | GOFORD | Ähnliche | TO-252-2 | 1 | $ 0.9067 | ||
| NCE70T360K | NCE | Ähnliche | TO-252 | 1,142 | $ 0.8534 |