- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon AUIRF7309QTR
| Producent | |
| Nr części prod. | AUIRF7309QTR |
| Nr LCSC | C533275 |
| Opak. | SO-8 |
| Numer Klienta | |
| Klucz. cechy | 1.4W 30V 4A 100mΩ@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Infineon AUIRF7309QTR |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SO-8 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 520pF;440pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 72pF;93pF | |
| RDS(on) | 100mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SO-8 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 520pF;440pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 72pF;93pF | |
| RDS(on) | 100mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Designed specifically for automotive applications, this cellular HEXFET power MOSFET utilizes the latest process technology to achieve low on-resistance per unit silicon area. Combined with the fast switching speed for which HEXFET power MOSFETs are renowned and a rugged device design, this advantage provides designers with an extremely efficient and reliable device suitable for automotive and a wide variety of other applications.
Funkcje
Tłumaczenie AI
- Advanced planar technology
- Low on-resistance
- Logic level gate drive
- Dual N-channel and P-channel MOSFET
- Dynamic dv/dt rating
- 150°C operating temperature
- Fast switching
- Lead-free, RoHS compliant
- AEC-Q101 qualified
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 2.2128 | $ 2.21 |
| 10+ | $ 2.1803 | $ 21.80 |
| 30+ | $ 2.1576 | $ 64.73 |
| 100+ | $ 2.1364 | $ 213.64 |
Standardowa Obudowa4000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SO-8 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 520pF;440pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 72pF;93pF | |
| RDS(on) | 100mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | SO-8 | |
| Output Capacitance(Coss) | 180pF | |
| Ciss-Input Capacitance | 520pF;440pF | |
| Pd - Power Dissipation | 1.4W | |
| Configuration | Common source | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 72pF;93pF | |
| RDS(on) | 100mΩ@4.5V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 25nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel + P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Designed specifically for automotive applications, this cellular HEXFET power MOSFET utilizes the latest process technology to achieve low on-resistance per unit silicon area. Combined with the fast switching speed for which HEXFET power MOSFETs are renowned and a rugged device design, this advantage provides designers with an extremely efficient and reliable device suitable for automotive and a wide variety of other applications.
Funkcje
Tłumaczenie AI
- Advanced planar technology
- Low on-resistance
- Logic level gate drive
- Dual N-channel and P-channel MOSFET
- Dynamic dv/dt rating
- 150°C operating temperature
- Fast switching
- Lead-free, RoHS compliant
- AEC-Q101 qualified
C533275 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| VBA5325 | VBsemi Elec | Podobne | SO-8 | 62 | $0.3258 $0.3832 | ||
| IRF7309TRPBF | Infineon | Podobne | SO-8 | 1,802 | $ 0.6116 | ||
| SLP240C03D | Slkor | Podobne | SOP-8 | 680 | $0.0501 $0.1668 | ||
| SI4539DY-T1-E3-VB | VBsemi Elec | Podobne | SO-8 | 55 | $0.3348 $0.3938 | ||
| SI4532CDY-T1-GE3-VB | VBsemi Elec | Podobne | SO-8 | 30 | $0.3441 $0.4048 |