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Modele EDAEasyEDA
HXY MOSFET NTMFS4121NT1G-HXY
| Producent | HXY MOSFETAsian Brands |
| Nr części prod. | NTMFS4121NT1G-HXY |
| Nr LCSC | C53263134 |
| Opak. | DFN-8L(5x6) |
| Numer Klienta | |
| Klucz. cechy | 30W 30V 60A 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs |
| Karta Katalogowa | HXY MOSFET NTMFS4121NT1G-HXY |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Ciss-Input Capacitance | 814pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Ciss-Input Capacitance | 814pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 60A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Ciss-Input Capacitance | 814pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 60A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | HXY MOSFET | |
| Opak. | DFN-8L(5x6) | |
| Output Capacitance(Coss) | 498pF | |
| Ciss-Input Capacitance | 814pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 60A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 4.4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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C53263134 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |