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ST SCTWA40N12G24AG
| Producent | |
| Nr części prod. | SCTWA40N12G24AG |
| Nr LCSC | C5268797 |
| Opak. | HiP247-4 |
| Numer Klienta | |
| Klucz. cechy | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247-4 package |
| Karta Katalogowa | ST SCTWA40N12G24AG |
| Zgodność z RoHS | 3 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | HiP247-4 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | HiP247-4 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
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Opis
Tłumaczenie AI
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Funkcje
Tłumaczenie AI
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 ℃)
- Source sensing pin for increased efficiency
Zastosowania
Tłumaczenie AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | HiP247-4 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | ST | |
| Opak. | HiP247-4 | |
| Configuration | - | |
| Drain to Source Voltage | 1.2kV | |
| Operating Temperature | -55℃~+200℃ | |
| Output Capacitance(Coss) | 56pF | |
| Current - Continuous Drain(Id) | 33A |
| Typ | Opis | |
|---|---|---|
| Ciss-Input Capacitance | 1.23nF | |
| Pd - Power Dissipation | 290W | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 105mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 63nC | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Funkcje
Tłumaczenie AI
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 ℃)
- Source sensing pin for increased efficiency
Zastosowania
Tłumaczenie AI
- Main inverter (electric traction)
- DC/DC converter for EV/HEV
- On board charger (OBC)
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Typ | Szczegóły |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |