LCSC Electronics logoLCSC Electronics svg logo
Zaloguj
USD
Qorvo TQP7M9104 product image
  • TQP7M9104 thumbnail 1
  • TQP7M9104 thumbnail 2
  • TQP7M9104 thumbnail 3
  • Rozmieszczenie wyprowadzeń
  • Footprint
Zdjęcia poglądowe

Qorvo TQP7M9104

Producent
Nr części prod.
TQP7M9104
Nr LCSC
C471175
Opak.
QFN-24-EP(4x4)
Numer Klienta
Klucz. cechy
2W High-Linearity Amplifier
Karta KatalogowaQorvo TQP7M9104
Zgodność z RoHS1 dokumentów dostępnych
Części alternatywne2
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni

Specyfikacje Produktu

Wszystko
TypOpis
KategoriaRF and Wireless/RF Amplifiers
ProducentQorvo
Opak.QFN-24-EP(4x4)
Gain15.8dB
Operating Temperature-40℃~+85℃
Voltage - Supply5V~5.25V
Frequency Range600MHz~2.7GHz
Input Return Loss12dB
Noise Figure4.4dB
Output Return Loss9.5dB
FeaturesLinearization design;Fail-safe;Bias control circuit;Electrostatic protection;Low-power mode
IP349.5dBm
P1dB32.8dBm
Current - Supply435mA

Opis

Tłumaczenie AI

The TQP7M9104 is a high linearity driver amplifier in industry standard, RoHS compliant, QFN surface mount package. This InGaP / GaAs HBT delivers high performance across 600 – 2700 MHz range of frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and +32.5 dBm P1dB at 2.14 GHz while only consuming 435 mA quiescent collector current. All devices are 100% RF and DC tested. The TQP7M9104 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. The TQP7M9104 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device is an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multicarrier 3G / 4G base stations.

Funkcje

Tłumaczenie AI
  • 600 – 2700 MHz
  • +32.8 dBm P1dB +49.5 dBm Output IP3
  • 15.8 dB Gain At 2140 MHz
  • Single Supply, 435 mA Collector Current
  • Internal RF Overdrive Protection
  • Internal DC Overvoltage Protection
  • Internal Active Bias
  • On Chip ESD Protection
  • Shut-down Capability
  • Capable Of Handling 10:1 VSWR At +5V, 2.14 GHz, +32.8 dBm CW POUT Or +23.5 dBm WCDMA POUT

Zastosowania

Tłumaczenie AI
  • Repeaters
  • BTS Transceivers
  • BTS High Power Amplifiers
  • CDMA / WCDMA / LTE General Purpose Wireless