- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
VISHAY SIZF914DT-T1-GE3
| Producent | |
| Nr części prod. | SIZF914DT-T1-GE3 |
| Nr LCSC | C467958 |
| Opak. | PowerPAIR(6x5) |
| Numer Klienta | |
| Klucz. cechy | 25V 23.5A 0.9mΩ@10V 60W 2 N-Channel PowerPAIR(6x5) FET, MOSFET Arrays RoHS |
| Karta Katalogowa | VISHAY SIZF914DT-T1-GE3 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAIR(6x5) | |
| Reverse Transfer Capacitance (Crss) | 47pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 510pF;1.65nF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 23.5A | |
| RDS(on) | 0.9mΩ@10V | |
| Pd - Power Dissipation | 60W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Vgs | -16V;20V;16V;-20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAIR(6x5) | |
| Reverse Transfer Capacitance (Crss) | 47pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 510pF;1.65nF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 23.5A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 0.9mΩ@10V | |
| Pd - Power Dissipation | 60W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Vgs | -16V;20V;16V;-20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- TrenchFET 4th generation power MOSFET
- SkyFET low-side MOSFET with integrated Schottky diode
- G1 return S1 pin for enhanced high-side drive
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- CPU core power supply
- Computer/server point-of-load (POL) power
- Synchronous buck converter
- Telecom DC/DC power supply
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAIR(6x5) | |
| Reverse Transfer Capacitance (Crss) | 47pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 510pF;1.65nF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 23.5A | |
| RDS(on) | 0.9mΩ@10V | |
| Pd - Power Dissipation | 60W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Vgs | -16V;20V;16V;-20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | VISHAY | |
| Opak. | PowerPAIR(6x5) | |
| Reverse Transfer Capacitance (Crss) | 47pF | |
| Ciss-Input Capacitance | 1.05nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 510pF;1.65nF | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 23.5A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 0.9mΩ@10V | |
| Pd - Power Dissipation | 60W | |
| Type | N-Channel | |
| Configuration | - | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 6.6nC@10V | |
| Vgs | -16V;20V;16V;-20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- TrenchFET 4th generation power MOSFET
- SkyFET low-side MOSFET with integrated Schottky diode
- G1 return S1 pin for enhanced high-side drive
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- CPU core power supply
- Computer/server point-of-load (POL) power
- Synchronous buck converter
- Telecom DC/DC power supply
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |