Abbildung ähnlich
EDA-ModelleEasyEDA
DIODES DMTH4004SCTBQ-13
| Hersteller | |
| Herst.-Teilenr. | DMTH4004SCTBQ-13 |
| LCSC-Nr. | C461119 |
| Verp. | TO-263 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 40V 100A TO-263 |
| Datenblatt | DIODES DMTH4004SCTBQ-13 |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.441nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.305nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 68.6nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.441nF | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 4.305nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 68.6nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
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Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and is supported by PPAP, making it ideal for the following applications:
- Engine management systems
- Body control electronics
- DC-DC converters
Merkmale
KI-Übersetzung
- Rated temperature up to +175°C for high ambient temperature environments
- 100% unclamped inductive switching for enhanced reliability and durability in end applications
- Low on-resistance RDS(ON) for minimized power loss
- Low gate charge Qg for minimized switching loss
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "green" device
- AEC-Q101 high-reliability qualified
- PPAP capable
Anwendungen
KI-Übersetzung
- Engine Management Systems - Body Control Electronics - DC-DC Converters
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 3
3 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.6581 | $ 1.66 |
| 10+ | $ 1.6218 | $ 16.22 |
| 30+ | $ 1.5981 | $ 47.94 |
| 100+ | $ 1.5745 | $ 157.45 |
Standardgehäuse800/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.441nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.305nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 68.6nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | TO-263 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 1.441nF | |
| Current - Continuous Drain(Id) | 100A |
| Typ | Beschreibung | |
|---|---|---|
| Ciss-Input Capacitance | 4.305nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 102pF | |
| RDS(on) | 2.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 68.6nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and is supported by PPAP, making it ideal for the following applications:
- Engine management systems
- Body control electronics
- DC-DC converters
Merkmale
KI-Übersetzung
- Rated temperature up to +175°C for high ambient temperature environments
- 100% unclamped inductive switching for enhanced reliability and durability in end applications
- Low on-resistance RDS(ON) for minimized power loss
- Low gate charge Qg for minimized switching loss
- Lead-free surface finish, RoHS compliant
- Halogen- and antimony-free "green" device
- AEC-Q101 high-reliability qualified
- PPAP capable
Anwendungen
KI-Übersetzung
- Engine Management Systems - Body Control Electronics - DC-DC Converters
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| KCB2904A | KIA Semicon Tech | Ähnliche | TO-263 | 200 | $0.0858 $0.26 | ||
| BRCS055N10SHBD | BLUE ROCKET | Ähnliche | TO-263 | 88 | $ 0.6955 | ||
| IPB100N04S4H2 | Infineon | Ähnliche | TO-263 | 5 | $ 3.7082 | ||
| HYG053N10NS1B | HUAYI | Ähnliche | TO-263-2L | 419 | $ 0.5557 | ||
| AOB288L-VB | VBsemi Elec | Ähnliche | TO-263(D2PAK) | 10 | $1.0338 $1.2162 |