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EDA-ModelleEasyEDA
Infineon IPB015N04L G
| Hersteller | |
| Herst.-Teilenr. | IPB015N04L G |
| LCSC-Nr. | C403866 |
| Verp. | TO-263-3 |
| Kundennummer | |
| Hauptmerkm. | 250W 40V 120A 1.8mΩ@4.5V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS |
| Datenblatt | Infineon IPB015N04L G |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-3 | |
| Output Capacitance(Coss) | 4.5nF | |
| Ciss-Input Capacitance | 28nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 346nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-3 | |
| Output Capacitance(Coss) | 4.5nF | |
| Ciss-Input Capacitance | 28nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 120A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 346nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
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Merkmale
KI-Übersetzung
- Fast switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC compliant for target applications
- N-channel, logic level
- Excellent gate charge × RDS(on) product (FOM)
- Ultra-low RDS(on)
- Avalanche rated
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Garantie auf jede Bestellung
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 3.6587 | $ 3.66 |
| 10+ | $ 3.1759 | $ 31.76 |
| 30+ | $ 2.8875 | $ 86.63 |
| 100+ | $ 2.5975 | $ 259.75 |
| 500+ | $ 2.4633 | $ 1231.65 |
| 1,000+ | $ 2.4032 | $ 2403.20 |
Standardgehäuse1000/Full Reel | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-3 | |
| Output Capacitance(Coss) | 4.5nF | |
| Ciss-Input Capacitance | 28nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 120A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 346nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Infineon | |
| Verp. | TO-263-3 | |
| Output Capacitance(Coss) | 4.5nF | |
| Ciss-Input Capacitance | 28nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 120A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 1.8mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 346nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Fast switching MOSFET for SMPS
- Technology optimized for DC/DC converters
- JEDEC compliant for target applications
- N-channel, logic level
- Excellent gate charge × RDS(on) product (FOM)
- Ultra-low RDS(on)
- Avalanche rated
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
C403866 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IPB120N04S4-02 | Infineon | Ähnliche | TO-263-3 | 355 | $ 2.4548 | ||
| IPB120N06S4-H1 | Infineon | Ähnliche | TO-263-3 | 4,911 | $ 3.0063 | ||
| CSD18542KTT | TI | Ähnliche | TO-263-3 | 157 | $ 2.0376 | ||
| CSD18542KTTT | TI | Ähnliche | TO-263-3 | 230 | $ 2.6058 | ||
| TDM3726 | Techcode | Ähnliche | TO-263-3 | 2 | $ 1.1439 |