Infineon BAS4006E6433
| Producent | |
| Nr części prod. | BAS4006E6433 |
| Nr LCSC | C3758453 |
| Opak. | SOT-23 |
| Numer Klienta | |
| Klucz. cechy | DIODE ARR SCHOTTKY 40V SOT-23 |
| Karta Katalogowa | Infineon BAS4006E6433 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Infineon | |
| Opak. | SOT-23 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Pair Common Anode | |
| Voltage - Forward(Vf@If) | 1V@40mA | |
| Reverse Leakage Current (Ir) | 1uA@30V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 120mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Infineon | |
| Opak. | SOT-23 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Typ | Opis | |
|---|---|---|
| Diode Configuration | 1 Pair Common Anode | |
| Voltage - Forward(Vf@If) | 1V@40mA | |
| Reverse Leakage Current (Ir) | 1uA@30V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 120mA |
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Opis
Tłumaczenie AI
Silicon Schottky Diode - General - purpose diode for high - speed switching, Circuit protection, Voltage clamping, High - level detecting and mixing, Pb - free (RoHS compliant) package, Qualified according AEC Q101
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100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Infineon | |
| Opak. | SOT-23 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V | |
| Diode Configuration | 1 Pair Common Anode | |
| Voltage - Forward(Vf@If) | 1V@40mA | |
| Reverse Leakage Current (Ir) | 1uA@30V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 120mA |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Infineon | |
| Opak. | SOT-23 | |
| Operating Junction Temperature Range | - | |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Typ | Opis | |
|---|---|---|
| Diode Configuration | 1 Pair Common Anode | |
| Voltage - Forward(Vf@If) | 1V@40mA | |
| Reverse Leakage Current (Ir) | 1uA@30V | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 120mA |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
Silicon Schottky Diode - General - purpose diode for high - speed switching, Circuit protection, Voltage clamping, High - level detecting and mixing, Pb - free (RoHS compliant) package, Qualified according AEC Q101
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



