NCE NCE8295A
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCE8295A |
| Cod. LCSC | C341725 |
| Imballo | TO-220-3L |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 82V 95A TO-220-3L |
| Scheda Tecnica | NCE NCE8295A |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Output Capacitance(Coss) | 353pF | |
| Ciss-Input Capacitance | 6.8nF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Reverse Transfer Capacitance (Crss) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Output Capacitance(Coss) | 353pF | |
| Ciss-Input Capacitance | 6.8nF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 82V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 95A | |
| Reverse Transfer Capacitance (Crss) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Caratteristiche
Traduzione AI
- VDS = 82V, ID = 95A
- RDS(ON) < 8.0 mΩ @ VGS = 10V (Typ: 6.6 mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Special designed for convertors and power controls
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Applicazioni
Traduzione AI
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Output Capacitance(Coss) | 353pF | |
| Ciss-Input Capacitance | 6.8nF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 82V | |
| Current - Continuous Drain(Id) | 95A | |
| Reverse Transfer Capacitance (Crss) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-220-3L | |
| Output Capacitance(Coss) | 353pF | |
| Ciss-Input Capacitance | 6.8nF | |
| Pd - Power Dissipation | 170W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 82V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 95A | |
| Reverse Transfer Capacitance (Crss) | 261pF | |
| RDS(on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 109.3nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
Caratteristiche
Traduzione AI
- VDS = 82V, ID = 95A
- RDS(ON) < 8.0 mΩ @ VGS = 10V (Typ: 6.6 mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Special designed for convertors and power controls
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Applicazioni
Traduzione AI
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
C341725 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
