Zdjęcia poglądowe
Modele EDAEasyEDA
VISHAY SIHP12N60E-BE3
| Producent | |
| Nr części prod. | SIHP12N60E-BE3 |
| Nr LCSC | C3290406 |
| Opak. | TO-220AB |
| Numer Klienta | |
| Klucz. cechy | N-Channel MOSFET, Current:7.8A, Voltage:600V |
| Karta Katalogowa | VISHAY SIHP12N60E-BE3 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 937pF | |
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 937pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies and half-bridge-based electronic lamp ballasts.
Funkcje
Tłumaczenie AI
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Server and telecom power supplies
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) supplies
- Lighting
- High-intensity discharge (HID) lamps
- Fluorescent lamp ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 1.5862 | $ 1.59 |
| 200+ | $ 0.6142 | $ 122.84 |
| 500+ | $ 0.5926 | $ 296.30 |
| 1,000+ | $ 0.5818 | $ 581.80 |
Standardowa Obudowa50/Full Tube | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 937pF | |
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VISHAY | |
| Opak. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 937pF |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 147W | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 380mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 58nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
These N-channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies and half-bridge-based electronic lamp ballasts.
Funkcje
Tłumaczenie AI
- Low figure of merit (FOM) Ron × Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra-low gate charge (Qg)
- Avalanche energy rated (UIS)
Zastosowania
Tłumaczenie AI
- Server and telecom power supplies
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) supplies
- Lighting
- High-intensity discharge (HID) lamps
- Fluorescent lamp ballast lighting
- Industrial applications
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (photovoltaic inverters)
C3290406 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| SIHA12N60E-E3 | VISHAY | Podobne | TO-220 | 5 | $ 1.6129 | ||
| VBM165R12S | VBsemi Elec | Podobne | TO-220AB | 5 | $1.3901 $1.6354 | ||
| STP26NM60N | ST | Podobne | TO-220 | 1,423 | $ 2.2871 | ||
| IPP60R070CFD7 | Infineon | Podobne | TO-220-3 | 1 | $ 5.228 | ||
| APT11N80KC3-VB | VBsemi Elec | Podobne | TO-220AB | 5 | $2.4293 $2.8579 |