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ST STP150N10F7AG

Produttore
ST
Cod. Prod.
STP150N10F7AG
Cod. LCSC
C3290208
Imballo
TO-220
Numero Cliente
Attr. chiave
MOSFET N-CH 100V 110A TO-220
Scheda TecnicaST STP150N10F7AG
Conformità RoHS3 documenti disponibili
Parti alternative5
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100% Autentico · Reso o Sostituzione entro 30 Giorni

Specifiche del Prodotto

Tutto
TipoDescrizione
CategoriaDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ProduttoreST
ImballoTO-220
Output Capacitance(Coss)2nF
Ciss-Input Capacitance9nF
Pd - Power Dissipation250W
Configuration-
Operating Temperature-55℃~+175℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Reverse Transfer Capacitance (Crss)80pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Gate Charge(Qg)127nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))4.5V
TypeN-Channel
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Descrizione

Traduzione AI

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Caratteristiche

Traduzione AI
  • Designed for automotive application
  • Standard level VGS(TH)
  • 175°C junction temperature
  • 100% avalanche rated

Applicazioni

Traduzione AI
  • Switching applications